Samsung Electronics has begun deploying advanced non-destructive inspection technologies for hybrid bonding processes, as semiconductor manufacturers increase focus on defect detection in next-generation memory production.
According to industry sources, the company is introducing inspection systems capable of identifying microscopic defects such as voids at hybrid bonding interfaces—areas that are difficult to assess using conventional optical inspection methods. The initiative is aimed at improving inspection accuracy while minimizing losses of high-value wafers and high-bandwidth memory (HBM) components during production.
Among equipment suppliers, Onto Innovation is currently leading, with its systems undergoing validation on Samsung’s mass production lines. The company has entered into a joint development program with Samsung and has supplied inspection equipment utilizing laser ultrasound technology based on photoacoustic measurement.
The technology operates by generating ultrasonic waves through ultrafast laser pulses, enabling subsurface inspection of materials, including optically opaque layers such as metals. Reflected signals from internal features or voids are captured using a probe laser, allowing detailed analysis of bonding interfaces and alignment accuracy between stacked structures.
In parallel, Samsung is reported to be engaging with multiple vendors specializing in non-destructive inspection methods based on ultrasound and X-ray technologies. Several domestic equipment manufacturers have already conducted performance testing using bonded wafer samples, with further evaluations expected as part of ongoing qualification processes.
An industry official said Samsung divisions are holding discussions with multiple equipment vendors behind the scenes, considering solutions for both through-silicon via (TSV) structures in HBM and hybrid bonding interfaces.
The adoption of advanced inspection systems aligns with Samsung’s development of next-generation semiconductor technologies, including hybrid bonding for high-bandwidth memory and wafer-to-wafer integration architectures. The company recently showcased hybrid bonding applications for HBM at Nvidia’s GTC 2026 and presented related research at the International Solid-State Circuits Conference (ISSCC).
Hybrid bonding enables direct copper-to-copper interconnections between stacked semiconductor dies, offering improved electrical and thermal performance compared to conventional bonding methods. However, the increased complexity of these structures places greater emphasis on high-resolution, non-destructive inspection techniques to ensure manufacturing reliability.
With equipment qualification typically requiring several months, Samsung is expected to continue evaluating multiple inspection solutions throughout the year as it advances its hybrid bonding production capabilities.
Reference: https://www.thelec.net/news/articleView.html?idxno=6232
