Web Seminar on the Latest Developments in X-Ray Topography for Silicon Carbide (SiC)

Web Seminar on the Latest Developments in X-Ray Topography for Silicon Carbide (SiC)

The web seminar is led by our XRT experts Dr. Christian Reimann and Dr. Christian Kranert from our materials department.

The web seminar is led by our XRT experts Dr. Christian Reimann and Dr. Christian Kranert from our materials department.

They will be discussing two topics in particular: the method of fast basal plane dislocation (BPDs) detection with the XRTmicron tool and the semi-standardization for detection and quantification of threading screw dislocations (TSDs) in SiC.

At Fraunhofer IISB, we employ Rigaku XRTmicron tools to investigate crystallographic defects on wafer scale, non-destructively, with high measurement speed and highest spatial resolution. The X-ray topography measurement method used for this purpose is ideally suited for the analysis of epilayer structures, wafers, wafers with epilayer structures and partially processed wafers.